2n7000datasheet

2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandwell-provensilicon-gatemanufacturingprocess.,1995年11月1日—NoIdentificationNeeded.Obsolete.Thisdatasheetcontainsthedesignspecificationsforproductdevelopment.Specificationsmaychangeinany ...,1994年11月2日—PARAMETER.SYMBOL.VALUE.UNIT.Collector-EmitterVoltage.VCES.60.V.ContinuousDrainCurrent.ID.0.2.A.PulsedDrai...

參考資訊如下
2N7000

2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process.

2N7000 2N7002 NDS7002A N

1995年11月1日 — No Identification Needed. Obsolete. This datasheet contains the design specifications for product development. Specifications may change in any ...

2N7000

1994年11月2日 — PARAMETER. SYMBOL. VALUE. UNIT. Collector-Emitter Voltage. VCES. 60. V. Continuous Drain Current. ID. 0.2. A. Pulsed Drain Current.

2N7000 2N7002

This Power MOSFET is the second generation of. STMicroelectronics unique “single feature size” strip-based process. The resulting transistor.

2N7000 N-Channel Enhancement

The Supertex 2N7000 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate ...

2N7000 N-Channel Enhancement

The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This.

2N70002N7002, VQ1000JP, BS170

2001年7月16日 — Drain-Source Breakdown Voltage. V(BR)DSS. VGS = 0 V, ID = 10 μA. 70. 60. 60. VDS = VGS, ID = 1 mA. 2.1. 0.8. 3. V. Gate-Threshold Voltage.

2N70002N7002NDS7002A N

Description. These N-channel enhancement mode field effect transis- tors are produced using ON Semiconductor's proprietary, high cell density, ...

NDS7002A

2N7000 Maximum Safe Operating Area. Figure 14. 2N7002 Maximum Safe Operating ... RθJA = (See Datasheet). TJ - TA = P * RθJA. (t). Duty Cycle, D = t1/t2. P(pk) t1.